power f-mos fets 2sK758 2sK758 silicon n-channel power f-mos n features l low on-resistance r ds(on) : r ds(on) = 0.45 w (typ) l high-speed switching : t f = 45ns(typ) l no secondary breakdown n applications l dc-dc converter l non-contact relay l solenoid drive l motor drive n absolute maximum ratings (tc = 25?c) parameter drain-source breakdown voltage gate-source voltage drain current dc pulse allowable power t c =25?c dissipation ta =25?c channel temperature storage temperature symbol v dss v gss i d i dp p d t ch t stg rating 250 20 5 10 40 2 150 C55 to +150 unit v v a a w ?c ?c n electrical characteristics (tc = 25?c) parameter drain-source cut-off current gate-source leakage current drain-source breakdown voltage gate threshold voltage drain-source on-resistance forward transadmittance input capacitance output capacitance feedback capacitance turn-on time fall time turn-off time (delay time) symbol i dss i gss v dss v th r ds (on) | y fs | c iss c oss c rss t on t f t d (off) condition v ds =200v, v gs = 0 v gs =20v, v ds = 0 i d =1ma, v gs = 0 v ds =10v, i d =1ma v gs =10v, i d = 3a v ds = 10v, i d = 3a v ds =10v, v gs = 0, f=1mhz v gs =10v, i d = 3a v dd =100v, r l = 33 w min 250 1 1.8 typ 0.45 3 390 160 80 30 45 90 max 0.1 1 5 0.7 unit ma a v v w s pf pf pf ns ns ns unit : mm 1 : gate 2 : drain 3 : source to-220 full pack package (a) 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip 4.0 0.5 +0.2 - 0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.25 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 ?.1 0.1 free datasheet http://
0 10 20 30 40 50 020 40 60 80 100 120 140 160 ambient temperature ta ( ?c ) allowable power dissipation p d ( w ) (1) t c =ta (2) without heat sink (p d =2w) (1) (2) 0 1 2 3 4 5 6 7 8 0 4 8 12 16 20 24 drain-source voltage v ds ( v ) drain current i d ( a ) 5v 4v 3v t c =25?c p d =40w v gs =15v 10v 6v 0 1 2 3 4 5 6 7 8 024681012 drain current i d ( a ) forward transadmittance | y fs | ( s ) v ds =10v t c =25?c 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 024681012 drain current i d ( a ) drain-source on-resistance r ds(on) ( ) (1)v gs =10v (2)v gs =15v t c =25?c (1) (2) 0 1 2 3 4 5 6 7 8 024681012 gate-source voltage v gs ( v ) drain current i d ( a ) v ds =10v t c =25?c 1 0 40 80 120 160 200 240 10 100 1000 3 30 300 3000 10000 drain-source voltage v ds ( v ) input capacitance, output capacitance, c iss , c oss , c rss (p f ) feedback capacitance f=1mhz t c =25?c c iss c oss c rss 0 40 80 120 160 200 240 280 320 024681012 drain current i d ( a ) switching time t on , t f , t d(off) ( ns ) v dd =100v v gs =10v t c =25?c t d (off) t f t on 0.01 1 0.1 1 10 100 0.03 0.3 3 30 10 100 1000 3 30 300 drain-source voltage v ds ( v ) drain current i d ( a ) non repetitive pulse t c =25?c i dp t=1ms dc t=10ms i d 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 024681012 drain current i d ( a ) drain-source on-resistance r ds(on) ( ) v gs =10v t c =100?c ?5?c 25?c i d Cv ds |y fs | C i d r ds (on) C i d i d Cv gs c iss, c oss, c rss Cv ds t on, t f, t d (off) C i d p d Cta area of safe operation (aso) r ds (on) C i d power f-mos fets 2sK758 free datasheet http://
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